声学超表面的非对称声分束特性研究

非对称声分束超表面是由人工微单元结构按照特定序列构建的二维平面结构,可将垂直入射的声波分成两束传播方向和分束比自由调控的透射波,在声功能器件设计及声通信领域具有广泛的应用前景。本文系统研究了一种实现非对称声分束的设计理论和实现方法,基于局域声功率守恒条件研究了声分束器的设计理论、阻抗矩阵分布、法向声强分布、声压场分布等。利用遗传算法对四串联共振腔结构进行参数优化实现了声分束器所需的阻抗矩阵分布,声压场分布表明声波入射到声分束器后在入射侧激发出两列传播方向相反且幅值和衰减系数均相同的表面波,实现了入射侧与透射侧的局域声功率相互匹配。声波经过声分束器后被分为两束透射波,两束透射波的折射角和透射系数与理论值十分吻合,证明了设计理论及实现方法的正确性和可行性。本文的研究工作可以为新型非对称声分束结构设计提供理论参考、设计方法和技术支持,并促进其在工程领域的实际应用。     

Na原子链表面等离激元特性的含时密度泛函研究

本文用含时密度泛函理论研究了线性Na原子链的表面等离激元机理.主要在原子尺度下模拟计算了体系随着原子数增加及原子间距变化的集体激发过程.研究发现线性原子链有一个普遍的特性——存在一个纵模和两个横模.两个横模一般在实验上很难被观测到.纵模随着原子链长度增加,能量红移的同时,该纵模主峰的强度呈线性增长.随着原子个数的增加,端点模式(TE)开始蓝移,能量和偶极强度都逐渐趋向饱和.横模能量被劈裂的原因概括如下:(一)每个位置的电子受到的势不同,在两端的电子受到的势要比在中间的电子受到的势要高,因此两端的电荷积累也比中间多;(二)端点存在悬挂键,所以中间的电子-电子间相互作用与端点的不一样,这两方面又都与原子间距d有关.     

Fluid‐structure coupling of linear elastic model with compressible flow models

Cavitation erosion is caused in solids exposed to strong pressure waves developing in an adjacent fluid field. The knowledge of the transient distribution of stresses in the solid is important to understand the cause of damaging by comparisons with breaking points of the material. The modeling of this problem requires the coupling of the models for the fluid and the solid. For this purpose, we use a strategy based on the solution of coupled Riemann problems that has been originally developed for the coupling of 2 fluids. This concept is exemplified for the coupling of a linear elastic structure with an ideal gas. The coupling procedure relies on the solution of a nonlinear equation. Existence and uniqueness of the solution is proven. The coupling conditions are validated by means of quasi‐1D problems for which an explicit solution can be determined. For a more realistic scenario, a 2D application is considered where in a compressible single fluid, a hot gas bubble at low pressure collapses in a cold gas at high pressure near an adjacent structure.     

共轭线性对称性及其对PT-对称量子理论的应用

传统量子系统的哈密顿是自伴算子,哈密顿的自伴性不仅保证系统遵循酉演化和保持概率守恒,而且也保证了它自身具有实的能量本征值,这类系统称为自伴量子系统.然而,确实存在一些物理系统(如PT-对称量子系统),其哈密顿不是自伴的,这类系统称为非自伴量子系统.为了深入研究PT-对称量子系统,并考虑到算子PT的共轭线性性,首先讨论了共轭线性算子的一些性质,包括它们的矩阵表示和谱结构等;其次,分别研究了具有共轭线性对称性和完整共轭线性对称性的线性算子,通过它们的矩阵表示,给出了共轭线性对称性和完整共轭线性对称性的等价刻画;作为应用,得到了关于PT-对称及完整PT-对称算子的一些有趣性质,并通过一些具体例子,说明了完整PT-对称性对张量积运算不具有封闭性,同时说明了完整PT-对称性既不是哈密顿算子在某个正定内积下自伴的充分条件,也不是必要条件.     

Modification of Polylactide Nonwovens with Carbon Nanotubes and Ladder Poly(silsesquioxane)

Electrospun nonwovens of poly(L-lactide) (PLLA) modified with multiwall carbon nanotubes (MWCNT) and linear ladder-like poly(silsesquioxane) with methoxycarbonyl side groups (LPSQ-COOMe) were obtained. MWCNT and LPSQ-COOMe were added to the polymer solution before the electrospinning. In addition, nonwovens of PLLA grafted to modified MWCNT were electrospun. All modified nonwovens exhibited higher tensile strength than the neat PLA nonwoven. The addition of 10 wt.% of LPSQ-COOMe and 0.1 wt.% of MWCNT to PLLA increased the tensile strength of the nonwovens 2.4 times, improving also the elongation at the maximum stress.     

Local linear convergence analysis of Primal–Dual splitting methods

In this paper, we study the local linear convergence properties of a versatile class of Primal–Dual splitting methods for minimizing composite non-smooth convex optimization problems. Under the assumption that the non-smooth components of the problem are partly smooth relative to smooth manifolds, we present a unified local convergence analysis framework for these methods. More precisely, in our framework, we first show that (i) the sequences generated by Primal–Dual splitting methods identify a pair of primal and dual smooth manifolds in a finite number of iterations, and then (ii) enter a local linear convergence regime, which is characterized based on the structure of the underlying active smooth manifolds. We also show how our results for Primal–Dual splitting can be specialized to cover existing ones on Forward–Backward splitting and Douglas–Rachford splitting/ADMM (alternating direction methods of multipliers). Moreover, based on these obtained local convergence analysis result, several practical acceleration techniques are discussed. To exemplify the usefulness of the obtained result, we consider several concrete numerical experiments arising from fields including signal/image processing, inverse problems and machine learning. The demonstration not only verifies the local linear convergence behaviour of Primal–Dual splitting methods, but also the insights on how to accelerate them in practice.     

Synthesis of self‐healing polyurethane urea‐based supramolecular materials

Supramolecular polyurethane ureas are expected to have superior mechanical properties primarily due to the reversible, noncovalent interactions such as hydrogen bonding interactions. We synthesized polyurethane prepolymers from small molecular weight of poly(tetramethylene ether)glycol and isophorone diisocyanates, which were end capped with propylamine to synthesize polyurethane ureas with high contents of urea and urethane groups for hydrogen‐bonding formations to facilitate self‐healing. The effects of polyurethane urea molecular weight (3000 ≤ M_n ≤ 9000), crosslinking, and cutting direction were studied in terms of thermal, mechanical, and morphological properties with an emphasis on the self‐healing efficiency. It was found that the thermal self‐healability was more pronounced as the molecular weight of polyurethane urea decreased, showing a maximum of more than 96% with 3000 M_n when the sample was cut along the stretch direction. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 468–474     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

均匀磁场下碳离子笔形束的剂量变化分析及位置修正方法

分析外加均匀磁场对于碳离子笔形束剂量分布的影响,并考虑修正这种影响,为磁共振成像引导碳离子放射治疗的临床应用提供指导。本文利用蒙特卡罗方法模拟计算了不同能量碳离子笔形束在不同强度磁场下的剂量分布情况,发现垂直于碳离子束入射方向的均匀磁场对于碳离子笔形束射程缩短的影响很小,磁场对碳离子束的主要影响是引起束流横向偏转,特别是碳离子束布拉格峰位置的横向侧移。横向侧移程度与碳离子束的能量和磁场强度相关,根据模拟结果,得到了一个计算碳离子束布拉格峰在磁场中相对横向偏转的方程,并提出一种校正外加磁场引起的碳离子束布拉格峰横移的角度修正方法。这些结果可用于指导磁共振图像引导碳离子放射治疗计划系统的研发。